Communication-concepts 2N4401 Uživatelský manuál stáhnout pdf (Strana 2)

2N4401

Low Power Bipolar Transistors

Page <2> 12/05/08 V1.1

Absolute Maximum Ratings

Rating Symbol 2N4401 Unit

Collector-Emitter Voltage

V

CEO

40

VCollector-Base Voltage

V

CBO

60

Emitter-Base Voltage

V

EBO

6

Collector Current Continuous

I

C

600 mA

Power Dissipation at T

a

= 25°C

Derate above 25°C

P

D

625

5.0

mW

mW/°C

Power Dissipation at T

c

= 25°C

Derate above 25°C

1.5

12

W

W/°C

Operating and Storage JunctionTemperature Range

T

j

, T

stg

-55 to +150 °C

Thermal Resistance

Junction to Case

R

th (j-c)

83.3

°C/W

Junction to Ambient

R

th (j-a)

200

Electrical Characteristics (T

a

= 25°C unless otherwise specified)

Characteristic Symbol 2N4401 Unit

Collector Emitter Voltage

I

C

= 1mA, I

B

= 0

BV

CEO

*

>40

V

Collector Base Voltage

I

C

= 100µA, I

E

= 0

BV

CBO

>60

Emitter Base Voltage

I

E

= 100µA, I

C

= 0

BV

EBO

>6

Base Cut off Current

V

CE

= 35V, V

EB

= 0.4V

I

BEV

<0.1

µA

Collector Cut off Current

V

CE

= 35V, V

EB

= 0.4V

I

CEX

Collector Emitter Saturation Voltage

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

V

CE (Sat)

*

<0.4

<0.75

V

Base Emitter Saturation Voltage

I

C

= 150mA, I

B

= 15mA

I

C

= 500mA, I

B

= 50mA

V

BE (Sat)

*

0.75 - 0.95

<1.2

*Pulse Test : Pulse Width: ≤300µs, Duty ≤2.0%

1 2 3 4 5 6 7

Low Power Bipolar Transistors 1

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